diff options
author | Brian Norris <norris@broadcom.com> | 2010-08-20 12:36:12 -0700 |
---|---|---|
committer | David Woodhouse <David.Woodhouse@intel.com> | 2010-10-24 23:38:30 +0100 |
commit | 13ed7aed45e370f30a746e49e674144297a92e16 (patch) | |
tree | 8f559b677e3629263ef5d3bd5cfc26bc540c8155 /drivers/mtd/nand/nand_base.c | |
parent | 5c709ee9f33da4a07d94e3d48b297eb6f003fc61 (diff) |
mtd: nand: support new Toshiba SLC
Toshiba does not use ONFI for their NAND flash. So we have to continue
to add new IDs used by Toshiba devices as well as heuristic detection
for scanning the 2nd page for a BBM. This is a relatively harmless
start at supporting many of them.
These chips mostly follow the same ID fields of previous generations,
but there is a need for a tweak.
These chips introduce a strange 576 byte OOB (that's 36 bytes per
512 bytes of page). In the preliminary data, Toshiba has not
defined exactly how their ID strings should decode. In the future,
a new tweak must be added.
Data is taken from, among others, Toshiba TC58TxG4S2FBAxx
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Diffstat (limited to 'drivers/mtd/nand/nand_base.c')
-rw-r--r-- | drivers/mtd/nand/nand_base.c | 5 |
1 files changed, 3 insertions, 2 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index b0f091aca097..1ae953c4eccc 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2972,8 +2972,8 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, * Bad block marker is stored in the last page of each block * on Samsung and Hynix MLC devices; stored in first two pages * of each block on Micron devices with 2KiB pages and on - * SLC Samsung, Hynix, and AMD/Spansion. All others scan only - * the first page. + * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan + * only the first page. */ if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && (*maf_id == NAND_MFR_SAMSUNG || @@ -2982,6 +2982,7 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) && (*maf_id == NAND_MFR_SAMSUNG || *maf_id == NAND_MFR_HYNIX || + *maf_id == NAND_MFR_TOSHIBA || *maf_id == NAND_MFR_AMD)) || (mtd->writesize == 2048 && *maf_id == NAND_MFR_MICRON)) |