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104MHz needs a latency of 8 clock cycles and the VHF
flag must be set. Also t_rdyo is specified as
"not applicable" so pick a lower value, and force at
least 1 clk between AVD High to OE Low.
Signed-off-by: Adrian Hunter <adrian.hunter@nokia.com>
Signed-off-by: Tony Lindgren <tony@atomide.com>
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Add support for multiblock erase command. OneNANDs (excluding Flex-OneNAND)
are capable of simultaneous erase of up to 64 eraseblocks which is much faster.
This changes the erase requests for regions covering multiple eraseblocks
to be performed using multiblock erase.
Signed-off-by: Mika Korhonen <ext-mika.2.korhonen@nokia.com>
Reviewed-by: Adrian Hunter <adrian.hunter@nokia.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
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Define ECC status for 4-bit ECC status
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
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Add support for Samsung Flex-OneNAND devices.
Flex-OneNAND combines SLC and MLC technologies into a single device.
SLC area provides increased reliability and speed, suitable for storing
code such as bootloader, kernel and root file system. MLC area
provides high density and is suitable for storing user data.
SLC and MLC regions can be configured through kernel parameter.
[akpm@linux-foundation.org: export flexoand_region and onenand_addr]
Signed-off-by: Rohit Hagargundgi <h.rohit@samsung.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Cc: Vishak G <vishak.g@samsung.com>
Signed-off-by: Andrew Morton <akpm@linux-foundation.org>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
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Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
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Use the higher bits for other purpose.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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The 2X Program is an extension of Program Operation.
Since the device is equipped with two DataRAMs, and two-plane NAND Flash
memory array, these two component enables simultaneous program of 4KiB.
Plane1 has only even blocks such as block0, block2, block4 while Plane2
has only odd blocks such as block1, block3, block5.
So MTD regards it as 4KiB page size and 256KiB block size
Now the following chips support it. (KFXXX16Q2M)
Demux: KFG2G16Q2M, KFH4G16Q2M, KFW8G16Q2M,
Mux: KFM2G16Q2M, KFN4G16Q2M,
And more recent chips
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Update copyrights and code cleanup
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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- DDP code clean-up
- Reduce block & bufferram operations in DDP
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Idea from Jarkko Lavinen
Signed-off-by: Jarkko Lavinen <jarkko.lavinen@nokia.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.
The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Add OneNAND Sync. Burst Read support
Tested with OMAP platform
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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