diff options
Diffstat (limited to 'Documentation')
| -rw-r--r-- | Documentation/DocBook/mtdnand.tmpl | 19 | ||||
| -rw-r--r-- | Documentation/devicetree/bindings/mtd/atmel-dataflash.txt | 14 |
2 files changed, 15 insertions, 18 deletions
diff --git a/Documentation/DocBook/mtdnand.tmpl b/Documentation/DocBook/mtdnand.tmpl index 17910e2052ad..0c674be0d3c6 100644 --- a/Documentation/DocBook/mtdnand.tmpl +++ b/Documentation/DocBook/mtdnand.tmpl @@ -572,7 +572,7 @@ static void board_select_chip (struct mtd_info *mtd, int chip) </para> <para> The simplest way to activate the FLASH based bad block table support - is to set the option NAND_USE_FLASH_BBT in the option field of + is to set the option NAND_BBT_USE_FLASH in the bbt_option field of the nand chip structure before calling nand_scan(). For AG-AND chips is this done by default. This activates the default FLASH based bad block table functionality @@ -773,20 +773,6 @@ struct nand_oobinfo { done according to the default builtin scheme. </para> </sect2> - <sect2 id="User_space_placement_selection"> - <title>User space placement selection</title> - <para> - All non ecc functions like mtd->read and mtd->write use an internal - structure, which can be set by an ioctl. This structure is preset - to the autoplacement default. - <programlisting> - ioctl (fd, MEMSETOOBSEL, oobsel); - </programlisting> - oobsel is a pointer to a user supplied structure of type - nand_oobconfig. The contents of this structure must match the - criteria of the filesystem, which will be used. See an example in utils/nandwrite.c. - </para> - </sect2> </sect1> <sect1 id="Spare_area_autoplacement_default"> <title>Spare area autoplacement default schemes</title> @@ -1158,9 +1144,6 @@ in this page</entry> These constants are defined in nand.h. They are ored together to describe the functionality. <programlisting> -/* Use a flash based bad block table. This option is parsed by the - * default bad block table function (nand_default_bbt). */ -#define NAND_USE_FLASH_BBT 0x00010000 /* The hw ecc generator provides a syndrome instead a ecc value on read * This can only work if we have the ecc bytes directly behind the * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ diff --git a/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt new file mode 100644 index 000000000000..ef66ddd01da0 --- /dev/null +++ b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt @@ -0,0 +1,14 @@ +* Atmel Data Flash + +Required properties: +- compatible : "atmel,<model>", "atmel,<series>", "atmel,dataflash". + +Example: + +flash@1 { + #address-cells = <1>; + #size-cells = <1>; + compatible = "atmel,at45db321d", "atmel,at45", "atmel,dataflash"; + spi-max-frequency = <25000000>; + reg = <1>; +}; |